THIN FILM FORMING APPARATUS

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United States of America Patent

APP PUB NO 20130104803A1
SERIAL NO

13582616

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.

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Patent Owner(s)

Patent OwnerAddress
MITSUI ENGINEERING & SHIPBUILDING CO LTDCHUO-KU TOKYO 104-8439

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyatake, Naomasa Tamano-shi, JP 8 61
Murata, Kazutoshi Tamano-shi, JP 11 397
Takizawa, Kazuki Tamano-shi, JP 10 24

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