BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Apr 25, 2013
app pub date -
Oct 23, 2012
filing date -
Oct 24, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A bipolar transistor is disclosed, which includes a collector region, a base region, an emitter region and field plates. Each field plate is present in a structure of a flat sidewall covering one side face of the active region so that it also covers the collector region from one side. The field plate has its surface parallel to the side face of the active region and is isolated from the side face of the active region by a pad oxide layer. The field plate has its top lower than the surface of the active region. The bipolar transistor is capable of improving the breakdown voltage of the device without increasing the collector resistance or deteriorating the frequency characteristic. A method of manufacturing bipolar transistor is also disclosed.
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