Trench MOS Device with Schottky Diode and Method for Manufacturing Same
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United States of America Patent
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app pub date -
Dec 11, 2012
filing date -
Dec 3, 2009
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Abandoned
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Abstract
In one embodiment the present invention includes a semiconductor device. The semiconductor device comprises a first semiconductor region, a second semiconductor region and a trench region. The first semiconductor region is of a first conductivity type and a first conductivity concentration. The trench region includes a metal layer in contact with the first semiconductor region to form a metal-semiconductor junction. The second semiconductor region is adjacent to the first semiconductor region that has a second conductivity type and a second conductivity concentration. The second semiconductor region forms a PN junction with the first semiconductor region, and the trench region has a depth such that the metal-semiconductor junction is proximate to the PN junction.
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