GROUP III-NITRIDE METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
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United States of America Patent
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Issued Date -
Apr 25, 2013
app pub date -
Oct 20, 2011
filing date -
Oct 20, 2011
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Abstract
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device such as, for example, a high electron mobility transistor (HEMT) or metal-insulator-semiconductor field-effect transistor (MISFET), or combinations thereof. The IC device includes a buffer layer formed on a substrate, a barrier layer formed on the buffer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) and gallium (Ga), a cap layer formed on the barrier layer, the cap layer including nitrogen (N) and at least one of indium (In) and gallium (Ga), and a gate formed on the cap layer, the gate being directly coupled with the cap layer. Other embodiments may also be described and/or claimed.
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