STRUCTURE OF SEMICONDUCTOR CHIPS WITH ENHANCED DIE STRENGTH AND A FABRICATION METHOD THEREOF

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United States of America Patent

APP PUB NO 20130099250A1
SERIAL NO

13357338

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Abstract

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An improved structure of semiconductor chips with enhanced die strength and a fabrication method thereof are disclosed. The improved structure comprises a substrate, an active layer, and a backside metal layer, in which the active layer is formed on the front side of the substrate and includes at least one integrated circuit; the backside metal layer is formed on the backside of the substrate, which fully covers the area corresponding to the area covered by the integrated circuits in the active layer. By using the specific dicing process of the present invention, the backside metal layer and the substrate can be diced tidily. Die cracking on the border between the substrate and the backside metal layer of the diced single chip can be prevented, and thereby the die strength can be significantly enhanced.

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Patent Owner(s)

Patent OwnerAddress
WIN SEMICONDUCTORS CORPNO 69 KEJI 7TH RD GUISHAN DIST TAOYUAN CITY 33383

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUA, Chang-Hwang Tao Yuan Shien, TW 32 419

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