Forming a bridging feature using chromeless phase-shift lithography
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United States of America Patent
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Oct 22, 2013
Grant Date -
Apr 11, 2013
app pub date -
Oct 7, 2011
filing date -
Oct 7, 2011
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Abstract
An elongated, chromeless, bridging feature is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the photolithography mask. A corresponding photoresist feature is formed using the bridging feature. The phase difference may be chosen to minimize dimensional variation of the corresponding photoresist feature.
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