SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Apr 4, 2013
app pub date -
Aug 29, 2012
filing date -
Sep 29, 2011
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Abandoned
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Abstract
A semiconductor device includes a first element structure that includes a charge supply layer of first polarity; a charge channel layer of second polarity, the charge channel layer being formed above the charge supply layer and including a recess portion; and a first electrode formed in the recess portion above the charge channel layer.
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