COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Apr 4, 2013
app pub date -
Jul 18, 2012
filing date -
Sep 29, 2011
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Abstract
A compound semiconductor device includes an electron transit layer having a first polarity, a p-type cap layer which is formed above the electron transit layer and has a second polarity, and an n-type cap layer which is formed on the p-type cap layer and has the first polarity. The n-type cap layer includes portions having different thicknesses.
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