SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Apr 4, 2013
app pub date -
Mar 4, 2011
filing date -
Mar 5, 2010
priority date (Note) -
Abandoned
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Abstract
In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.
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