Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

13250923

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
UNITY SEMICONDUCTOR CORPORATION1050 ENTERPRISE WAY #700 C/O RAMBUS INC SUNNYVALE CA 94089

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MEYER, RENE ATHERTON, US 34 706
WU, JIAN SAN JOSE, US 427 2508

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation