MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL, METHOD FOR WRITING AND READING THE MRAM CELL USING A SELF-REFERENCED READ OPERATION
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Sep 19, 2012
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Sep 28, 2011
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Abstract
The present disclosure concerns a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction comprising a synthetic storage layer; a sense layer having a sense magnetization that is reversible; and a tunnel barrier layer between the sense layer and the storage layer; wherein a net local magnetic stray field couples the storage layer with the sense layer; and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell. The disclosed MRAM cell can be written and read with lower consumption in comparison to conventional MRAM cells.
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