COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 28, 2013
app pub date -
Aug 15, 2012
filing date -
Sep 28, 2011
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Abandoned
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Abstract
An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; a p-type semiconductor layer formed between the electron supply layer and the gate electrode; and a hole barrier layer formed between the electron supply layer and the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
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