SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 28, 2013
app pub date -
Aug 13, 2012
filing date -
Sep 27, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; and a source electrode and a drain electrode formed on the second semiconductor layer. The third semiconductor layer is formed with a semiconductor material doped with a p-type impurity element. In the third semiconductor layer, a p-type area is formed immediately below the gate electrode, and a high resistance area having a higher resistance than the p-type area is formed in an area other than the p-type area.
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