VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Mar 28, 2013
app pub date -
Sep 10, 2012
filing date -
Sep 22, 2011
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Abandoned
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Abstract
A vertical PNP device in a silicon-germanium (SiGe) BiCMOS process is disclosed. The device is formed in a deep N-well and includes a collector region, a base region and an emitter region. The collector region has a two-dimensional L-shaped structure composed of a lightly doped first P-type ion implantation region and a heavily doped second P-type ion implantation region. The collector region is picked up by P-type pseudo buried layers formed at bottom of the shallow trench field oxide regions. A manufacturing method of vertical PNP device in a SiGe BiCMOS process is also disclosed. The method is compatible with the manufacturing processes of a SiGe heterojunction bipolar transistor in the SiGe BiCMOS process.
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