Phase change random access memory and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 22, 2013
Grant Date -
Mar 28, 2013
app pub date -
Dec 20, 2011
filing date -
Sep 26, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully