Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
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United States of America Patent
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Sep 9, 2014
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Mar 21, 2013
app pub date -
Nov 16, 2012
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Oct 2, 2006
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Abstract
A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.
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