Thin Interdigitated Backside Contact Solar Cell and Manufacturing Process Thereof
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United States of America Patent
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app pub date -
Oct 30, 2012
filing date -
Oct 31, 2008
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Abstract
A design and manufacturing method for an interdigitated backside contact photovoltaic (PV) solar cell less than 100 μm thick are disclosed. A porous silicon layer is formed on a wafer substrate. Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All backside processing of the solar cell (junctions, passivation layer, metal contacts to the N+ and P+ regions) is performed while the thin epitaxial layer is attached to the porous layer and substrate. After backside processing, the wafer is clamped and exfoliated. The front of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, texturing, passivation and deposition of an antireflective coating. During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cells.
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