Memory and Method of Adjusting Operating Voltage thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20130064027A1
SERIAL NO

13231980

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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By adjusting an operating voltage of a memory cell in a memory according to a measured capacitance result indicating capacitance of an under-test capacitor of the memory cell, an appropriate operating voltage for the memory cell can always be determined according to the measured capacitance result. The measured capacitance result indicates whether the capacitance of the under-test capacitor indicating the characteristic of the gate dielectric of the memory cell is higher or lower than a reference capacitor, and is generated by amplifying a difference between two voltages indicating capacitance of the reference capacitor and the capacitance of the under-test capacitor.

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Patent Owner(s)

Patent OwnerAddress
EMEMORY TECHNOLOGY INCROOM 305 NO 47 PARK AVENUE II RD HSINCHU SCIENCE PARK HSIN-CHU 300091

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yen-Tai Hsin-Chu City, TW 28 208
Liu, Cheng-Jye Hsinchu County, TW 24 245
Shen, Chiun-Chi Hsinchu County, TW 16 140
Sun, Wein-Town Taoyuan County, TW 110 592
Wu, Meng-Yi Kaohsiung City, TW 62 592

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