Importance

Loading Importance Indicators...

Abstract

The present invention provides an SOI semiconductor structure with a hybrid of coplanar germanium (Ge) and III-V, and a method for preparing the same. A heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material coplanar on an insulator includes at least one Ge substrate formed on the insulating layer, and the other substrate is a group III-V semiconductor material formed on the Ge semiconductor. The preparation method for forming the semiconductor structure includes: preparing a global Ge on insulator substrate structure; preparing a group III-V semiconductor material layer on the Ge on insulator substrate structure; performing photolithography and etching for the first time to make a patterned window to the above of a Ge layer to form a recess; preparing a spacer in the recess; preparing a Ge film by selective epitaxial growth; performing a chemical mechanical polishing to obtain the heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material being coplanar; removing the spacer and a defective Ge layer part close to the spacer; implementing isolation between Ge and the group III-V semiconductor material; and preparing a high-performance CMOS device including a Ge PMOS and a III-V NMOS by forming an MOS structure.

Loading the Abstract Image...

First Claim