INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE WITH THE SAME
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United States of America Patent
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Issued Date -
Mar 14, 2013
app pub date -
Aug 29, 2012
filing date -
Sep 13, 2011
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Abandoned
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Abstract
The invention relates to an inductively-coupled plasma processing apparatus and a method for processing a substrate. By arranging a magnetic field line adjusting component made of magnetic conductive material, a quasi-closed low reluctance path is formed to serve as the path of the magnetic field line loop outside of the reaction chamber, and the path of most magnetic field lines of the induced magnetic field is constrained by the low reluctance path. In this way, most of magnetic field energy diverged previously may be gathered, and then the magnetic field is multiplied; alternatively, less energy is required to obtain the same magnetic field strength to generate plasma for performing etching, which improves utilization efficiency of energy source.
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