SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER
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Nov 2, 2012
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Dec 7, 2009
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Abstract
An InGaN-on-substrate structure that includes an InGaN layer and two mirror layers on opposing sides of and sandwiching the InGaN layer. The InGN layer includes an InGaN seed layer and an active InGaN layer grown on the InGaN seed layer. Such a structure is useful in a vertical optoelectronic device.
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