PRESSURE CONTROL IN CONTINUOUS PLASMA DEPOSITION PROCESSES
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United States of America Patent
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Issued Date -
Mar 7, 2013
app pub date -
Sep 1, 2011
filing date -
Sep 1, 2011
priority date (Note) -
Abandoned
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Abstract
Processes of identifying small pressure irregularities in a system used for continuous plasma deposition are provided. Sensitive light scattering is used to detect the presence of nucleated particles in a detection area that is outside the plasma region of high electric field whereby the presence of the particles indicates a pressure abnormality in the plasma deposition chamber. The pressure of the plasma deposition chamber is then adjusted to reduce or eliminate the presence of particles within the detection area and to optimize deposition of material on a substrate.
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