ANNEALING METHOD TO REDUCE DEFECTS OF EPITAXIAL FILMS AND EPITAXIAL FILMS FORMED THEREWITH
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 28, 2013
app pub date -
Dec 23, 2011
filing date -
Aug 30, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An annealing method to reduce defects of epitaxial films and epitaxial films formed therewith. The annealing method includes features as follows: apply a pressure ranged from 10 MPa to 6,000 MPa to an epitaxial film grown on a substrate through a vapor phase deposition process and heat the epitaxial film at a temperature lower than the melting temperature of the epitaxial film. Through applying pressure to the epitaxial film, the lattice strain of the epitaxial film is alleviated, and therefore the defect density of the epitaxial film also decreases.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully