METHOD FOR THE FABRICATION OF BONDING SOLDER LAYERS ON METAL BUMPS WITH IMPROVED COPLANARITY

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United States of America Patent

APP PUB NO 20130052817A1
SERIAL NO

13220064

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Abstract

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A method for fabrication of bonding solder layers on metal bumps with improved coplanarity, applicable to the flip-chip bump bonding technique for semiconductor IC packaging. When metal bumps have different sizes, the bonding solders thereon may have different heights after high-temperature reflows. The present invention can improve the coplanarity of bonding solders, and mitigating or even eliminating the difficulties in downstream packaging and testing caused by the inconsistent height of bonding solders. To achieve this purpose, the present invention proposes a two-step fabrication method for controlling the surface areas of the metal bumps and the bonding solder layers thereon separately, and thereby improving the coplanarity of the bonding solders after high-temperature reflows. The two-step fabrication method includes: a first-step process for forming metal bumps on the semiconductor devices; and a second-step process for forming bonding solder layers of different sizes on the metal bumps.

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Patent Owner(s)

Patent OwnerAddress
WIN SEMICONDUCTORS CORPNO 69 KEJI 7TH RD GUISHAN DIST TAOYUAN CITY 33383

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Tim Tao Yuan Shien, TW 4 5

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