METHOD OF FABRICATING POROUS FILM STRUCTURE USING DRY PROCESSES AND POROUS FILM STRUCTURES FABRICATED BY THE SAME
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United States of America Patent
Stats
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N/A
Issued Date -
Feb 28, 2013
app pub date -
Aug 20, 2012
filing date -
Aug 23, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Provided are a method of fabricating a porous thin film structure, by forming a thin film from at least two elements, followed by selectively removing the certain element using a dry etching process, and a porous thin film structure fabricated by the same. Because all processes of the method of fabricating a porous thin film structure are dry processes, process control is simply accomplished, environmental impact is low, and mass production is possible, in contrast to when using a typical wet process such as electrodeposition or dealloying. Also, since a level of porosity is easily controlled and maintained uniform, a mesoporous thin film structure showing a reproducible level of sensitivity when used as a sensor can be fabricated.
First Claim
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Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
KR | A | KR20130023011 | Oct 31, 2011 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED PATENT APPLICATION | METHOD OF FABRICATION OF POROUS FILM STRUCTURE BY DRY PROCESSES AND POROUS FILM STRUCTURES FABRICATED BY THE SAME | Mar 07, 2013 | |||
KR | A | KR20140016404 | Jan 03, 2014 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED PATENT APPLICATION | METHOD OF FABRICATION OF POROUS FILM STRUCTURE BY DRY PROCESSES AND POROUS FILM STRUCTURES FABRICATED BY THE SAME | Feb 07, 2014 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY | 5 HWARANG-RO 14-GIL SEONGBUK-GU SEOUL 02792 02792 |
International Classification(s)

- 2012 Application Filing Year
- C22C Class
- 982 Applications Filed
- 876 Patents Issued To-Date
- 89.21 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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BYUN, Ji Young | Seoul, KR | 26 | 38 |
# of filed Patents : 26 Total Citations : 38 | |||
CHOI, Jeong Beom | Gyeonggi-Do, KR | 1 | 8 |
# of filed Patents : 1 Total Citations : 8 | |||
HA, Heon Phil | Seoul, KR | 16 | 21 |
# of filed Patents : 16 Total Citations : 21 | |||
KIM, Do Hyung | Seoul, KR | 279 | 2748 |
# of filed Patents : 279 Total Citations : 2748 | |||
KIM, Sang Hoon | Gyeonggi-Do, KR | 236 | 1246 |
# of filed Patents : 236 Total Citations : 1246 | |||
LIM, Chae Sun | Incheon, KR | 2 | 8 |
# of filed Patents : 2 Total Citations : 8 |
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Patent Citation Ranking
- 8 Citation Count
- C22C Class
- 13.08 % this patent is cited more than
- 12 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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