METHODS FOR PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING HYDRAZINES
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United States of America Patent
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Issued Date -
Feb 28, 2013
app pub date -
Mar 14, 2011
filing date -
Mar 19, 2010
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Abandoned
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Abstract
A method of forming a metal-containing film by atomic layer deposition is provided herein. The method comprises using (a) at least one metal fluorinated β-diketonate precursor; and (b) a co-reagent comprising at least one optionally-substituted hydrazine.
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