Semiconductor device with damascene bit line and method for manufacturing the same
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Dec 21, 2011
filing date -
Aug 29, 2011
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Abstract
A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.
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