Semiconductor Device and Method of Forming TIM Within Recesses of MUF Material
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United States of America Patent
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Issued Date -
Feb 28, 2013
app pub date -
Aug 25, 2011
filing date -
Aug 25, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device has a semiconductor die mounted to a substrate. The semiconductor die and substrate are disposed within a mold chase with a releasing layer disposed over the semiconductor die. A MUF material is deposited around the semiconductor die, releasing layer, and substrate through an opening in the mold chase. The opening in the mold chase is located in an upper mold support of the mold chase. A recess is formed in the MUF material by removing the releasing layer. A TIM is formed in the recess of the MUF material. The TIM is substantially coplanar with the MUF material. A heat spreader is formed over the TIM material. The heat spreader can be formed within the recess of the MUF material over the TIM. A plurality of bumps is formed over a surface of the substrate opposite the semiconductor die.
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