SI-GE LAMINATED THIN FILM AND INFRARED SENSOR USING SAME
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Issued Date -
Feb 14, 2013
app pub date -
Mar 25, 2011
filing date -
Apr 27, 2010
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Abandoned
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Abstract
Provided is a Si—Ge laminated thin film including at least one Si layer and at least one Ge layer, which are alternately laminated on a substrate (1). A Si layer (31) and a Ge layer (22) each have a thickness in a range of 5 to 500 nm. The Si layer (31) is amorphous and only the Ge layer (22) is crystallized. An average crystallite size of Ge in the Ge layer (22) is 20 nm or less.
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