RF IMMUNITY IMPROVED PYRO SENSOR
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United States of America Patent
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Issued Date -
Feb 7, 2013
app pub date -
Oct 6, 2011
filing date -
Aug 3, 2011
priority date (Note) -
Abandoned
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Abstract
A pyro sensor is for use in a passive infrared motion detector. The pyro sensor includes at least one passive infrared sensor element. A field effect transistor includes a drain, a gate and a source. The gate is connected to the at least one passive infrared sensor element. A first capacitor interconnects the source and ground. The first capacitor has a value of approximately between 47 picoFarads and 1000 picoFarads. A second capacitor interconnects the source and ground. The second capacitor has a value of approximately between 4.7 picoFarads and 47 picoFarads.
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