NITROGEN IMPLANTED ULTRAFAST SAMPLING SWITCH

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United States of America Patent

APP PUB NO 20130029453A1
SERIAL NO

13560820

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of manufacturing a semiconductor device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising forming an undoped InGaAs layer on an insulative semiconductor substrate and bonded on opposed sides to a pair of electrical contact layers adapted to constitute the electrodes of a switch, comprising forming the bulk point defects by irradiating the InGaAs layer with Nitrogen ions.

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Patent Owner(s)

Patent OwnerAddress
THALES HOLDING UK PLC2 DASHWOOD LANG ROAD THE BOURNE BUSINESS PARK ADDLESTONE WEYBRIDGE SURREY KT15 2NX

International Classification(s)

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  • 2012 Application Filing Year
  • H01L Class
  • 20465 Applications Filed
  • 18077 Patents Issued To-Date
  • 88.34 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20122013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
GRAHAM, Chris S London, GB 1 8
SEEDS, Alwyn London, GB 7 78

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 4.91 % this patent is cited more than
  • 12 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4074140169277539225214911984534318001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0250500750100012501500175020002250250027503000325035003750400042504500

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