NITROGEN IMPLANTED ULTRAFAST SAMPLING SWITCH
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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N/A
Issued Date -
Jan 31, 2013
app pub date -
Jul 27, 2012
filing date -
Jul 27, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of manufacturing a semiconductor device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising forming an undoped InGaAs layer on an insulative semiconductor substrate and bonded on opposed sides to a pair of electrical contact layers adapted to constitute the electrodes of a switch, comprising forming the bulk point defects by irradiating the InGaAs layer with Nitrogen ions.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
THALES HOLDING UK PLC | 2 DASHWOOD LANG ROAD THE BOURNE BUSINESS PARK ADDLESTONE WEYBRIDGE SURREY KT15 2NX |
International Classification(s)

- 2012 Application Filing Year
- H01L Class
- 20465 Applications Filed
- 18077 Patents Issued To-Date
- 88.34 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
GRAHAM, Chris S | London, GB | 1 | 8 |
# of filed Patents : 1 Total Citations : 8 | |||
SEEDS, Alwyn | London, GB | 7 | 78 |
# of filed Patents : 7 Total Citations : 78 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 4.91 % this patent is cited more than
- 12 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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