NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
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United States of America Patent
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Issued Date -
Jan 31, 2013
app pub date -
Mar 23, 2011
filing date -
Mar 23, 2010
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Abandoned
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Abstract
An object of the present invention is to provide a nitride semiconductor light emitting element having a novel transparent electrode. The nitride semiconductor light emitting element has the transparent electrode on a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer and the transparent electrode can be in good ohmic contact to each other and wherein the variability of the forward voltage (Vf) within the wafer can be reduced.
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