METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Jul 16, 2012
filing date -
Jul 20, 2011
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Abstract
A method for manufacturing a MOSFET includes the steps of: introducing an impurity into a silicon carbide layer; forming a carbon layer in a surface layer portion of the silicon carbide layer having the impurity introduced therein, by selectively removing silicon from the surface layer portion; and activating the impurity by heating the silicon carbide layer having the carbon layer formed therein.
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