USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE
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United States of America Patent
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Issued Date -
Jan 24, 2013
app pub date -
Jul 19, 2011
filing date -
Jul 19, 2011
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Abandoned
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Abstract
A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate.
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