LATERAL TRANSISTOR WITH CAPACITIVELY DEPLETED DRIFT REGION
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United States of America Patent
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app pub date -
Jul 18, 2011
filing date -
Jul 18, 2011
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Abandoned
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Abstract
A lateral transistor includes a gate formed over a gate oxide and a field plate formed over a thick gate oxide. The field plate is electrically connected to a source. The field plate is configured to capacitively deplete a drift region when the lateral transistor is in the OFF state.
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