Nanoscopically Thin Photovoltaic Junction Solar Cells
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United States of America Patent
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Issued Date -
Jan 24, 2013
app pub date -
Nov 24, 2010
filing date -
Nov 25, 2009
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Abandoned
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Abstract
Nanoscopically thin photovoltaic junction solar cells are disclosed herein. In an embodiment, there is provided a photovoltaic film 100 that includes a p-doped region 102, an n-doped region 106, and an intrinsic region 104 positioned between the p-doped region 102 and the n-doped region 106, wherein an overall thickness of the photovoltaic film is between about 15 nm to about 30 nm so as to extract hot carriers excited across a band gap, wherein the extracted hot carriers are capable of resulting in an open circuit voltage, Voc, of the photovoltaic film that increases with optical frequency, and wherein the extracted hot carriers are capable of resulting in a total short-circuit current density, Jsc, between about 4 mA/cm2 and about 8 mA/cm2.
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