Semiconductor Device and Method of Forming Substrate With Seated Plane for Mating With Bumped Semiconductor Die
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United States of America Patent
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Issued Date -
Jan 17, 2013
app pub date -
Jul 12, 2011
filing date -
Jul 12, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device has a first insulating layer formed over a substrate. The substrate has a plurality of conductive layers and plurality of second insulating layers formed between the conductive layers. The substrate can be a PCB or interposer. A plurality of openings is formed in the first insulating layer by etching or laser direct ablation. A semiconductor die has a plurality of bumps formed over a surface of the semiconductor die. The pattern of openings coincides with a pattern of the bumps. The die is mounted to the substrate with the bumps disposed within the openings in the first insulating layer. Alternatively, a conductive paste can be disposed within the openings in the first insulating layer. The bumps are reflowed to electrically connect the die to the first substrate. The bumps are substantially contained within the openings of the first insulating layer to reduce bridging between adjacent bumps.
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