METHOD FOR DOPING A SEMICONDUCTOR SUBSTRATE, AND SOLAR CELL HAVING TWO-STAGE DOPING
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United States of America Patent
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Issued Date -
Jan 17, 2013
app pub date -
Mar 3, 2011
filing date -
Mar 3, 2010
priority date (Note) -
Abandoned
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Abstract
A method for doping a semiconductor substrate includes heating the semiconductor substrate by irradiation with laser radiation and at the same time diffusing dopant from a dopant source into the semiconductor substrate in heated regions. The semiconductor substrate is heated by the irradiation with laser radiation. A surface portion of the semiconductor substrate that is less than 10% of the total surface of all irradiated regions is melted and recrystallized. There is also provided a solar cell.
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