POLISHING SLURRY AND POLISHING METHOD THEREFOR
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United States of America Patent
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Issued Date -
Jan 10, 2013
app pub date -
Nov 22, 2010
filing date -
Apr 9, 2010
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Abandoned
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Abstract
The present invention provides a polishing technique which enables polishing of silicon carbide, which is difficult to be polished, with high efficiency and high surface accuracy. The present invention relates to a polishing slurry for polishing a substrate, which comprises abrasive particles containing manganese oxide as a main component and in which the content of the abrasive particles is less than 10% by weight based on the polishing slurry. The polishing slurry of the present invention has a pH of preferably 7 or more. It is particularly preferable to use manganese dioxide as abrasive particles. The polishing slurry of the present invention is suitable for a substrate of silicon carbide.
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