METHOD OF PRODUCING SOI WAFER
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United States of America Patent
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Mar 23, 2011
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Mar 26, 2010
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Abstract
The present invention provides a method of producing a high quality SOI wafer having a thin BOX layer with high productivity. In the method of producing an SOI wafer by performing heat treatment on a silicon wafer after implanting oxygen ions into silicon wafer, first ion implantation is performed on the silicon wafer to a high dose of 2×1017 ions/cm2 to 3×1017 ions/cm2, and then second ion implantation is performed to a low dose of 5×1014 ions/cm2 to 1×1016 ions/cm2. Subsequently, heat treatment is performed in a high oxygen concentration atmosphere at an oxygen partial pressure ratio of 10% to 80%, and then heat treatment is performed in a low oxygen atmosphere at an oxygen partial pressure ratio of less than 10%. After that, heat treatment is performed in a chlorine-containing gas atmosphere by adjusting the oxygen atmosphere to the chlorine-containing gas atmosphere by flowing argon through a chlorine-containing solution.
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