Methods utilizing microwave radiation during formation of semiconductor constructions
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United States of America Patent
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Jun 4, 2013
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app pub date -
Sep 10, 2012
filing date -
Sep 11, 2008
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Abstract
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
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