INTERCONNECT STRUCTURE WITH IMPROVED DIELECTRIC LINE TO VIA ELECTROMIGRATION RESISTANT INTERFACIAL LAYER AND METHOD OF FABRICATING SAME
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United States of America Patent
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app pub date -
Sep 14, 2012
filing date -
Dec 30, 2008
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Abandoned
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Abstract
Interconnect structures having improved electromigration resistance are provided that include a metallic interfacial layer (or metal alloy layer) that is present at the bottom of a via opening. The via opening is located within a second dielectric material that is located atop a first dielectric material that includes a first conductive material embedded therein. The metallic interfacial layer (or metal alloy layer) that is present at the bottom of the via opening is located between the underlying first conductive material embedded within the first dielectric and the second conductive material that is embedded within the second dielectric material. Methods of fabricating the improved electromigration resistance interconnect structures are also provided.
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