SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
Jan 3, 2013
app pub date -
Apr 16, 2012
filing date -
Jun 30, 2011
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Abstract
A semiconductor device includes: a semiconductor substrate; a semiconductor element formed on the semiconductor substrate; a first metal ring surrounding the semiconductor element; an insulation film formed to cover the semiconductor element and having the first metal ring disposed therein; and a groove formed in the insulation film; wherein: the first metal ring is formed by laminating multiple metal layers in such a manner that respective outside lateral faces of the multiple metal layers are flush with each other, or that outside lateral face of each of the multiple metal layers which is positioned above an underlying metal layer is positioned more inside than outside lateral face of the underlying metal layer; and the groove has first bottom which is disposed inside the first metal ring and extending to a depth of upper surface of an uppermost metal layer of the first metal ring.
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