BIPOLAR HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS OF FORMING SAME
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United States of America Patent
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Issued Date -
Dec 27, 2012
app pub date -
Jun 21, 2012
filing date -
Jun 23, 2011
priority date (Note) -
Abandoned
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Abstract
An epilayer structure includes a field-effect transistor structure and a heterojunction bipolar transistor structure. The heterojunction bipolar transistor structure contains an n-doped subcollector and a collector formed in combination with the field-effect transistor structure, wherein at least a portion of the subcollector or collector contains Sn, Te, or Se. In one embodiment, a base is formed over the collector; and an emitter is formed over the base. The bipolar transistor and the field-effect transistor each independently contain a III-V semiconductor material.
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