Ge-Rich GST-212 phase change memory materials
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United States of America Patent
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Feb 3, 2015
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Dec 15, 2011
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Jun 23, 2011
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A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.
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