EPTAXIAL SUBSTRATE, METHOD FOR MAKING THE SAME AND METHOD FOR GROWING EPITAXIAL LAYER USING THE SAME

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United States of America Patent

APP PUB NO 20120325139A1
SERIAL NO

13337017

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Abstract

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An epitaxial substrate is provided, the epitaxial substrate is used to grow epitaxial layer. The epitaxial substrate includes a base having a number of grooves to form a patterned epitaxial growth surface. The patterned epitaxial growth surface is referred as an epitaxial growth surface. A carbon nanotube layer covers on the epitaxial growth surface, and the carbon nanotube layer corresponding to the grooves is suspended on the epitaxial substrate.

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Patent Owner(s)

Patent OwnerAddress
HON HAI PRECISION INDUSTRY CO LTD66 CHUNG SHAN ROAD TU-CHENG NEW TAIPEI
TSINGHUA UNIVERSITY100084 NO 1 TSINGHUA YUAN BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100084

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FAN, SHOU-SHAN Beijing, CN 1514 11778
WEI, YANG Beijing, CN 346 1584

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