METHODS FOR SUBLIMATION OF Mg AND INCORPORATION INTO CdTe FILMS TO FORM TERNARY COMPOSITIONS
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United States of America Patent
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Issued Date -
Dec 20, 2012
app pub date -
Jun 18, 2012
filing date -
Jun 17, 2011
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Abandoned
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Abstract
A method for sublimating a thin film of Magnesium (Mg) on a semiconductor structure for improved efficiency is described. One embodiment includes a method comprised of providing a semiconductor substrate in a vacuum chamber, wherein the substrate comprises a window layer and an absorber layer made of CdTe. The method further includes heating the substrate to a diffusion temperature or greater followed by depositing a Mg film on the absorber layer using a sublimation process, wherein at least a portion of the Mg forms a Cd1-xMgxTe alloy within the absorber layer.
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