NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Dec 20, 2012
app pub date -
Dec 21, 2010
filing date -
Dec 22, 2009
priority date (Note) -
Abandoned
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Abstract
Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.
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