PATTERN MEASUREMENT APPARATUS AND PATTERN MEASUREMENT METHOD
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United States of America Patent
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Issued Date -
Dec 20, 2012
app pub date -
Jun 13, 2012
filing date -
Jun 14, 2011
priority date (Note) -
Abandoned
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Abstract
A pattern measurement apparatus scans an observation region of a sample surface with an electron beam and detects secondary electrons emitted from the sample surface with the irradiation of the electron beam, by using a plurality of electron detectors arranged around the optical axis of the electron beam. Images are taken in two directions that are orthogonal to a pattern extending direction, and are opposite to each other across the optical axis. Then, profiles of a line orthogonal to each of edges are extracted from the images, and a subtraction between the line profiles is taken to obtain a subtractive profile. The position of an upper end of each edge is detected based on a descending portion of the subtractive profile, and the position of a lower end of the edge is detected based on a rising portion or a descending portion of one of the line profiles.
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