HOT WIRE CHEMICAL VAPOR DEPOSTION (HWCVD) WITH CARBIDE FILAMENTS
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United States of America Patent
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Issued Date -
Dec 13, 2012
app pub date -
Feb 25, 2011
filing date -
Feb 26, 2010
priority date (Note) -
Abandoned
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Abstract
A hot wire chemical vapor deposition apparatus for use in depositing thin films such as amorphous or epitaxial silicon upon a surface of a wafer or substrate by cracking a source or precursor gas such as silane. The apparatus includes a vacuum chamber and a source of precursor gas operable to inject the precursor gas into the chamber. The HWCVD apparatus also includes a heater with a support surface exposed to the deposition chamber, and the heater is operable to heat a substrate positioned upon the support surface. The apparatus includes a catalytic decomposition assembly with a filament positioned between the heater and the precursor gas inlet for selectively passing a current through the filament to resistively heat material of the filament. The filament material may be carbide such as tantalum carbide, which may be coated on a graphite core.
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